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IRF7749L2TRPBF 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRF7749L2TRPBF
상세설명  DirectFETPower MOSFET
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

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Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width ≤ 400μs; duty cycle ≤ 2%.
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
60
–––
–––
V
ΔΒVDSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.03
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
1.1
1.50
m
Ω
VGS(th)
Gate Threshold Voltage
2.0
2.9
4.0
V
ΔVGS(th)/ΔTJ
Gate Threshold Voltage Coefficient
–––
-10
––– mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
20
μA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
280
–––
–––
S
Qg
Total Gate Charge
–––
200
300
Qgs1
Pre-Vth Gate-to-Source Charge
–––
36
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
12
–––
nC
Qgd
Gate-to-Drain Charge
–––
71
110
Qgodr
Gate Charge Overdrive
–––
100
–––
See Fig. 9
Qsw
Switch Charge (Qgs2 + Qgd)
–––
83
–––
Qoss
Output Charge
–––
67
–––
nC
RG
Gate Resistance
–––
1.1
–––
Ω
td(on)
Turn-On Delay Time
–––
17
–––
tr
Rise Time
–––
43
–––
td(off)
Turn-Off Delay Time
–––
78
–––
ns
tf
Fall Time
–––
39
–––
Ciss
Input Capacitance
–––
12320
–––
Coss
Output Capacitance
–––
1810
–––
pF
Crss
Reverse Transfer Capacitance
–––
850
–––
Coss
Output Capacitance
–––
8060
–––
Coss
Output Capacitance
–––
1310
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
200
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
800
(Body Diode)
g
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
45
68
ns
Qrr
Reverse Recovery Charge
–––
78
120
nC
MOSFET symbol
RG=1.8Ω
VDS = 25V
Conditions
VGS = 0V, VDS = 120V, f=1.0MHz
VGS = 0V, VDS = 1.0V, f=1.0MHz
VDS = 16V, VGS = 0V
VDD = 30V, VGS = 10V
i
VGS = 0V
ƒ = 1.0MHz
ID = 120A
VDS = VGS, ID = 250μA
VDS = 60V, VGS = 0V
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 2mA
VGS = 10V, ID = 120A
i
TJ = 25°C, IF = 120A, VDD = 30V
di/dt = 100A/μs
i
TJ = 25°C, IS = 120A, VGS = 0V
i
showing the
integral reverse
p-n junction diode.
ID = 120A
VDS = 48V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 10V
VDS = 10V, ID = 120A
VDS = 30V


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