IRF8301MPBF datasheet(2/10 Pages) IRF

부품명	IRF8301MPBF

상세설명	DirectFETPower MOSFET

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제조업체	IRF [International Rectifier]

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2 / 10 page

IRF8301MTRPbF

September 6, 2013

2

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

BVDSS

Drain-to-Source Breakdown Voltage

30

–––

V

∆ΒVDSS/∆TJ

Breakdown Voltage Temp. Coefficient

–––

21

––– mV/°C

RDS(on)

Static Drain-to-Source On-Resistance

–––

1.3

1.5

m

Ω

–––

1.9

2.4

VGS(th)

Gate Threshold Voltage

1.35

1.7

2.35

V

∆VGS(th)/∆TJ

Gate Threshold Voltage Coefficient

–––

-6.0

––– mV/°C

IDSS

Drain-to-Source Leakage Current

–––

1.0

µA

–––

150

IGSS

Gate-to-Source Forward Leakage

–––

100

nA

Gate-to-Source Reverse Leakage

–––

-100

gfs

Forward Transconductance

150

–––

S

Qg

Total Gate Charge

–––

51

77

Qgs1

Pre-Vth Gate-to-Source Charge

–––

12

–––

Qgs2

Post-Vth Gate-to-Source Charge

–––

5.4

–––

nC

Qgd

Gate-to-Drain Charge

–––

16

–––

Qgodr

Gate Charge Overdrive

–––

18

–––

See Fig. 15

Qsw

Switch Charge (Qgs2 + Qgd)

–––

21

–––

Qoss

Output Charge

–––

28

–––

nC

RG

Gate Resistance

–––

1.0

3.0

Ω

td(on)

Turn-On Delay Time

–––

20

–––

tr

Rise Time

–––

30

–––

ns

td(off)

Turn-Off Delay Time

–––

25

–––

tf

Fall Time

–––

17

–––

Ciss

Input Capacitance

–––

6140

–––

Coss

Output Capacitance

–––

1270

–––

pF

Crss

Reverse Transfer Capacitance

–––

590

–––

Diode Characteristics

Parameter

Min. Typ. Max. Units

IS

Continuous Source Current

–––

110

(Body Diode)

A

ISM

Pulsed Source Current

–––

250

(Body Diode)

Ãg

VSD

Diode Forward Voltage

–––

0.77

1.0

V

trr

Reverse Recovery Time

–––

27

41

ns

Qrr

Reverse Recovery Charge

–––

45

68

nC

ƒ = 1.0MHz

VDS = 16V, VGS = 0V

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 32A i

VGS = 4.5V, ID = 25A i

MOSFET symbol

RG = 1.8Ω

VDS = 15V, ID = 25A

Conditions

VDS = VGS, ID = 150µA

TJ = 25°C, IF = 25A

VGS = 4.5V

ID = 25A

VGS = 0V

VDS = 15V

ID = 25A

VDD = 15V, VGS = 4.5VÃi

VGS = 20V

VGS = -20V

di/dt = 500A/µs

i

TJ = 25°C, IS = 25A, VGS = 0V i

showing the

integral reverse

p-n junction diode.

VDS = 24V, VGS = 0V

VDS = 15V

VDS = 24V, VGS = 0V, TJ = 125°C

See Fig. 17

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

TC measured with thermocouple mounted to top (Drain) of part.

Repetitive rating; pulse width limited by max. junction temperature.

Starting TJ = 25°C, L = 0.82mH, RG = 25Ω, IAS = 25A.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Notes:

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