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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRF6785MPBF 데이터시트(PDF) 1 Page - International Rectifier |
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IRF6785MPBF 데이터시트(HTML) 1 Page - International Rectifier |
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1 / 9 page  www.irf.com 1 04/18/07 IRF6785MTRPbF Notes through are on page 2 Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details) DIGITAL AUDIO MOSFET Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF6785MPbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETTM package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis- tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications. Features • Latest MOSFET Silicon technology • Key parameters optimized for Class-D audio amplifier applications • Low RDS(on) for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI • Low package stray inductance for reduced ringing and lower EMI • Can deliver up to 250W per channel into 8Ω Load in Half-Bridge Configuration Amplifier • Dual sided cooling compatible · Compatible with existing surface mount technologies · RoHS compliant containing no lead or bromide ·Lead-Free (Qualified up to 260°C Reflow) DirectFET ISOMETRIC MZ PD - 97282 SQ SX ST SH MQ MX MT MN MZ VDS 200 V RDS(on) typ. @ VGS = 10V 85 m : Qg typ. 26 nC RG(int) max 3.0 Key Parameters Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V A ID @ TA = 70°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation W PD @TA = 25°C Power Dissipation e PD @TA = 70°C Power Dissipation e EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current à A Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJA Junction-to-Ambient ek ––– 45 °C/W RθJA Junction-to-Ambient hk 12.5 ––– RθJA Junction-to-Ambient ik 20 ––– RθJC Junction-to-Case jk ––– 1.4 RθJ-PCB Junction-to-PCB Mounted 1.4 ––– 57 Max. 3.4 2.7 27 200 ± 20 19 -40 to + 150 0.022 2.8 1.8 33 8.4 |
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