전자부품 데이터시트 검색엔진 |
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2SD2082 데이터시트(PDF) 1 Page - Sanken electric |
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2SD2082 데이터시트(HTML) 1 Page - Sanken electric |
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1 / 1 page 146 Darlington 2SD2082 I C– V CE Characteristics (Typical) h FE– I C Characteristics (Typical) θj-a–t Characteristics I C– V BE Temperature Characteristics (Typical) V CE(sat) – I B Characteristics (Typical) Pc – T a Derating 0 0 10 20 26 24 6 13 5 Collector-Emitter Voltage V CE(V) 3mA 6mA 1.5mA 12mA I B=1mA Safe Operating Area (Single Pulse) 0 3 2 1 0.2 1 0.5 10 5 200 100 50 Base Current I B(mA) 4A 8A I C=16A 0.2 1 0.5 10 16 5 5000 30000 10000 1000 500 100 Collector Current I C(A) (V CE=4V) Typ 1ms 10ms 10 50 5 3 100 200 0.03 0.05 0.1 1 0.5 10 50 5 Collector-Emitter Voltage V CE(V) DC Without Heatsink Natural Cooling 0.1 1 5 0.5 1 1 0 100 1000 Time t(ms) 100 µ s 0 16 12 8 4 02 1 Base-Emittor Voltage V BE(V) (V CE=4V) h FE– I C Temperature Characteristics (Typical) 0.02 1 1 0 5 16 5000 20000 10000 1000 500 100 Collector Current I C(A) (V CE=4V) 125˚C –30˚C 25˚C 0.5 f T– I E Characteristics (Typical) –0.05 –0.1 –0.5 –1 –5 –10 –16 0 20 10 30 (V CE=12V) Emitter Current I E(A) 80 60 40 20 3.5 0 05 0 25 75 125 100 150 Ambient Temperature Ta(˚C) Without Heatsink Typ Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1382) Application : Driver for Solenoid, Motor and General Purpose Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 120 120 6 16(Pulse26) 1 75(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sAbsolute maximum ratings sElectrical Characteristics Ratings 10max 10max 120min 2000min 1.5max 2.5max 20typ 210typ Unit µA mA V V V MHz pF Conditions VCB=120V VEB=6V IC=10mA VCE=4V, IC=8A IC=8A, IB=16mA IC=8A, IB=16mA VCE=12V, IE=–1A VCB=10V, f=1MHz (Ta=25°C) (Ta=25°C) Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB External Dimensions FM100(TO3PF) 4.4 1.5 1.5 BE C 5.45±0.1 ø3.3±0.2 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 15.6±0.2 5.5±0.2 3.45 3.35 0.65 +0.2 -0.1 ±0.2 0.8 a b sTypical Switching Characteristics (Common Emitter) VCC (V) 40 RL ( Ω) 5 IC (A) 8 VBB2 (V) –5 IB2 (mA) –16 ton ( µs) 0.6typ tstg ( µs) 7.0typ tf ( µs) 1.5typ IB1 (mA) 16 VBB1 (V) 10 Weight : Approx 2.0g a. Part No. b. Lot No. B C E (2k Ω) (100Ω) Equivalent circuit |
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