SANKEN ELECTRIC CO., LTD.

FMEN-2208

071227

1／4

61426-01

１ Scope

The present specifications shall apply to FMEN-2208.

２ Outline

Type

Silicon Schottky Barrier Diode

Structure

Resin Molded

Applications

High Frequency Rectification

３ Flammability

UL94V-0(Equivalent)

４ Absolute maximum ratings

No.

Item

Symbol

Unit

Rating

Conditions

1

Transient Peak Reverse Voltage

V

85

PT ≤ 500 ns

Duty ≤ 1/40 *1

2

Peak Reverse Voltage

V

80

3

Average Forward Current

A

20

Refer to derating curve

in Section 7

4

Peak Surge Forward Current

A

120

10 ms.

Half sine wave, one shot

5

I

I

A

72

1 ms ≤ t ≤ 10 ms

6

Junction Temperature

°C

-40 to +150

7

Storage Temperature

°C

-40 to +150

*1

No.1, 2, 4 and 5 show ratings per one chip.

５ Electrical characteristics (Ta=25°C, unless otherwise specified)

No.

Item

Symbol

Unit

Value

Conditions

1

Forward Voltage Drop

V

0.76 max.

2

Reverse Leakage Current

uA

200 max.

3

Reverse Leakage Current Under

High Temperature

mA

100 max.

4

Thermal Resistance

°C /W

4.0 max.

Between Junction and case

No.1, 2 and 3 show characteristics per one chip.

PT

T