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KSD2012GTU 데이터시트(PDF) 1 Page - Fairchild Semiconductor |
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KSD2012GTU 데이터시트(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2000 Fairchild Semiconductor International Rev. A, February 2000 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted hFE Classification Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current 3 A IB Base Current 0.3 A PC Collector Power Dissipation (TC=25°C) 25 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = 50mA, IB = 0 60 V ICBO Collector Cut-off Current VCB = 60V, IE = 0 100 µA IEBO Emitter Cut-off Current VEB = 7V, IC = 0 10 µA h FE1 hFE2 DC Current Gain VCE = 5V, IC = 0.5A VCE = 5V, IC = 3A 100 20 320 VCE(sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.4 1 V VBE(on) Base-Emitter ON Voltage VCE = 5V, IC = 0.5A 0.7 1 V fT Current Gain Bandwidth Product VCE = 5V, IC = 0.5A 3 MHz Classification Y G hFE1 100 ~ 200 150 ~ 320 KSD2012 Low Frequency Power Amplifier • Complement to KSB1366 1 1.Base 2.Collector 3.Emitter TO-220F |
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