전자부품 데이터시트 검색엔진 |
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2N4851 데이터시트(PDF) 1 Page - Digitron Semiconductors |
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2N4851 데이터시트(HTML) 1 Page - Digitron Semiconductors |
1 / 4 page DIGITRON SEMICONDUCTORS 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 2N4851-2N4853 PN UNIJUNCTION TRANSISTORS MAXIMUM RATINGS Rating Symbol Value Unit RMS power dissipation PD 300 mW RMS emitter current Ie 50 mA Peak-pulse emitter current ie 1.5 Amp Emitter reverse voltage VB2E 30 Volts Interbase voltage VB2B1 35 Volts Operating junction temperature range TJ -65 to +125 °C Storage temperature range Tstg -65 to +200 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Rating Part number Symbol Min Typ Max Unit Intrinsic standoff ratio (VB2B1 = 10 V) 2N4851 2N4852, 2N4853 η 0.56 0.70 - - 0.75 0.85 - Interbase resistance (VB2B1 = 3 V, IE = 0) RBB 4.7 - 9.1 kΩ Emitter reverse current (VB2E = 30 V) 2N4851, 2N4852 2N4853 IEB2O - - - - 100 50 nA Peak point emitter current (VB2B1 = 25 V) 2N4851, 2N4852 2N4853 IP - - - - 2 0.4 µA Valley point current (VB2B1 = 20 V, RB2 = 100Ω) 2N4851 2N4852 2N4853 IV 2.0 4.0 6.0 - - - - - - mA Base one peak pulse voltage (V1 = 20V) 2N4851 2N4852 2N4853 VOB1 3.0 5.0 6.0 - - - - - - Volts Maximum frequency of oscillation f(max) - 0.25 - MHz sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20121019 |
유사한 부품 번호 - 2N4851 |
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유사한 설명 - 2N4851 |
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