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BTA1664L3 데이터시트(PDF) 1 Page - Cystech Electonics Corp. |
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BTA1664L3 데이터시트(HTML) 1 Page - Cystech Electonics Corp. |
1 / 6 page CYStech Electronics Corp. Spec. No. : C315L3 Issued Date : 2008.03.14 Revised Date :2011.09.06 Page No. : 1/6 BTA1664L3 CYStek Product Specification Low Vcesat PNP Epitaxial Planar Transistor BTA1664L3 Features • Low VCE(sat), VCE(sat)=-0.24V (typical), at IC / IB =- 500mA /- 20mA • Pb-free lead plating and halogen-free package Symbol Outline BTA1664L3 SOT-223 B C C E Absolute Maximum Ratings (Ta=25 °C) B:Base C:Collector E:Emitter Parameter Symbol Limits Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current(DC) IC -2 A Peak Collector Current ICM -4 A Peak Base Current IBM -200 mA Power Dissipation @TA=25℃ Pd 3 (Note) W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum. |
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