전자부품 데이터시트 검색엔진 |
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IRF3205 데이터시트(PDF) 4 Page - Nell Semiconductor Co., Ltd |
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IRF3205 데이터시트(HTML) 4 Page - Nell Semiconductor Co., Ltd |
4 / 7 page SEMICONDUCTOR Nell High Power Products RoHS RoHS Fig.5 Typical capacitance vs. Drain-to-Source voltage Drain-to-Source voltage, V (V) DS Total gate charge, Q (nC) G Fig.8 Maximum safe operating area Drain-to-Source voltage, V (V) DS Case temperature, T (°C) C Fig.7 Typical Source-Drain diode forward voltage Source-to-Drain voltage, V (V) SD Fig.6 Typical gate charge vs. Gate-to-Source voltage Fig.9 Maximum drain current vs. Case temperature 10 3 10 IRF3205 Series 6000 5000 4000 3000 2000 1000 0 1 10 100 C = ( ) iss C +C C = shorted gs gd ds C = C rss gd C = C +C oss ds gd V = 0V, GS f =1MHZ Coss Crss Ciss l = 62A D V = 44V DS V = 27V DS V = 11V DS T = 25 °C J T = 17 5°C J V = 0V GS 0.2 0.8 1.4 2.0 2.6 2 10 1 0.1 Operation in This Area is Limited by RDS(ON) 102 4 10 3 10 1 10 1 10 100 1000 10µs 100µs 1ms 10ms Note: 1. T 2. T = 25°C C = 175°C J 3. Single Pulse 120 100 80 60 40 20 0 25 50 75 100 125 150 175 LIMITED BY PACKAGE 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 www.nellsemi.com Page 4 of 7 |
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