UF3N30ZG-TN3-T datasheet(2/3 Pages) UTC

부품명	UF3N30ZG-TN3-T

상세설명	3A, 300V N-CHANNEL POWER MOSFET

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제조업체	UTC [Unisonic Technologies]

홈페이지	http://www.utc-ic.com

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UF3N30Z

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

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www.unisonic.com.tw

QW-R502-826. B



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

300

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current

Continuous

ID

3

A

Pulsed

IDM

12

A

Avalanche Energy

EAS

52

mJ

Power Dissipation

PD

50

W

Junction Temperature

TJ

+150

°C

Storage Temperature Range

TSTG

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

300

V

Drain-Source Leakage Current

IDSS

VDS=300V

1

µA

Gate-Source Leakage Current

Forward

IGSS

VGS=+20V, VDS=0V

10

µA

Reverse

VGS=-20V, VDS=0V

-10

µA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

ID=250µA

2

4

V

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=3A

2

Ω

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=25V, f=1MHz

200

pF

Output Capacitance

COSS

90

pF

Reverse Transfer Capacitance

CRSS

30

pF

SWITCHING PARAMETERS

Total Gate Charge

QG

VDD=50V, ID=1.3A, IG=100µA,

VGS=10V

4

nC

Gate to Source Charge

QGS

0.64

nC

Gate to Drain Charge

QGD

1.6

nC

Turn-ON Delay Time

tD(ON)

VDD=30V, ID=0.5A, RG=25

Ω,

VGS=0~10V

10

ns

Rise Time

tR

50

ns

Turn-OFF Delay Time

tD(OFF)

30

ns

Fall-Time

tF

40

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

IS

3

A

Maximum Body-Diode Pulsed Current

ISM

12

A

Drain-Source Diode Forward Voltage

VSD

IS=0.85A

1.3

V

유사한 부품 번호 - UF3N30ZG-TN3-T

제조업체	부품명	데이터시트	상세설명
Unisonic Technologies	UF3N30	134Kb / 3P	3A, 300V N-CHANNEL POWER MOSFET
	UF3N30G-TM3-R	134Kb / 3P	3A, 300V N-CHANNEL POWER MOSFET
	UF3N30G-TN3-R	134Kb / 3P	3A, 300V N-CHANNEL POWER MOSFET
	UF3N30L-TM3-R	134Kb / 3P	3A, 300V N-CHANNEL POWER MOSFET
	UF3N30L-TN3-R	134Kb / 3P	3A, 300V N-CHANNEL POWER MOSFET

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유사한 설명 - UF3N30ZG-TN3-T

제조업체	부품명	데이터시트	상세설명
Unisonic Technologies	UF3N30	134Kb / 3P	3A, 300V N-CHANNEL POWER MOSFET
	4N30Z	180Kb / 3P	4A, 300V N-CHANNEL POWER MOSFET
	UF2N30Z	145Kb / 3P	2A, 300V N-CHANNEL POWER MOSFET
	12N30	164Kb / 5P	12A, 300V N-CHANNEL POWER MOSFET
	10N30	156Kb / 4P	10A, 300V N-CHANNEL POWER MOSFET
	4N30	180Kb / 3P	4A, 300V N-CHANNEL POWER MOSFET
Fairchild Semiconductor	FQB9N30	647Kb / 9P	300V N-Channel MOSFET
Fairchild Semiconductor	FDP46N30	697Kb / 8P	300V N-Channel MOSFET
Kersemi Electronic Co.,...	KSMU5N30	1Mb / 8P	300V N-CHANNEL MOSFET
Fairchild Semiconductor	FQPF5N30	763Kb / 8P	300V N-Channel MOSFET

More results

UF3N30ZG-TN3-T 데이터시트(PDF) 2 Page - Unisonic Technologies

UF3N30ZG-TN3-T 데이터시트(HTML) 2 Page - Unisonic Technologies

유사한 부품 번호 - UF3N30ZG-TN3-T

유사한 설명 - UF3N30ZG-TN3-T

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