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FQD11P06TM 데이터시트(PDF) 2 Page - Fairchild Semiconductor |
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FQD11P06TM 데이터시트(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page Package Marking and Ordering Information www.fairchildsemi.com 2 Electrical Characteristics T C = 25°C unless otherwise noted. Part Number Top Mark Package Reel Size Tape Width Quantity FQD11P06 FQD11P06TM D-PAK 330 mm 16 mm 2500 units Packing Method Tape and Reel Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 2.1 mH, IAS = -9.4 A, VDD = -25 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ -11.4 A, di/dt ≤ 300 A/µs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -60 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C -- -0.07 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = -60 V, VGS = 0 V -- -- -1 µA VDS = -48 V, TC = 125°C -- -- -10 µA IGSSF Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -2.0 -- -4.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -4.7 A -- 0.15 0.185 Ω gFS Forward Transconductance VDS = -30 V, ID = -4.7 A -- 4.9 -- S Dynamic Characteristics Ciss Input Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 420 550 pF Coss Output Capacitance -- 195 250 pF Crss Reverse Transfer Capacitance -- 45 60 pF Switching Characteristics td(on) Turn-On Delay Time VDD = -30 V, ID = -5.7 A, RG = 25 Ω (Note 4) -- 6.5 25 ns tr Turn-On Rise Time -- 40 90 ns td(off) Turn-Off Delay Time -- 15 40 ns tf Turn-Off Fall Time -- 45 100 ns Qg Total Gate Charge VDS = -48 V, ID = -11.4 A, VGS = -10 V (Note 4) -- 13 17 nC Qgs Gate-Source Charge -- 2.0 -- nC Qgd Gate-Drain Charge -- 6.3 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -9.4 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -37.6 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -9.4 A -- -- -4.0 V trr Reverse Recovery Time VGS = 0 V, IS = -11.4 A, dIF / dt = 100 A/µs -- 83 -- ns Qrr Reverse Recovery Charge -- 0.26 -- µC ©2000 Fairchild Semiconductor Corporation FQD11P06 / FQU11P06 Rev. C2 FQU11P06 FQU11P06TU I-PAK N/A N/A 70 units Tube |
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