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FQD11P06TM 데이터시트(PDF) 2 Page - Fairchild Semiconductor

부품명 FQD11P06TM
상세설명  P-Channel QFET짰 MOSFET -60 V, -9.4 A, 185 m廓
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제조업체  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQD11P06TM 데이터시트(HTML) 2 Page - Fairchild Semiconductor

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Package Marking and Ordering Information
www.fairchildsemi.com
2
Electrical Characteristics T
C = 25°C unless otherwise noted.
Part Number
Top Mark
Package
Reel Size
Tape Width
Quantity
FQD11P06
FQD11P06TM
D-PAK
330 mm
16 mm
2500 units
Packing Method
Tape and Reel
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 2.1 mH, IAS = -9.4 A, VDD = -25 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ -11.4 A, di/dt ≤ 300 A/µs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
-60
--
--
V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, Referenced to 25°C
--
-0.07
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = -60 V, VGS = 0 V
--
--
-1
µA
VDS = -48 V, TC = 125°C
--
--
-10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = -25 V, VDS = 0 V
--
--
-100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = 25 V, VDS = 0 V
--
--
100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
-2.0
--
-4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -4.7 A
--
0.15
0.185
gFS
Forward Transconductance
VDS = -30 V, ID = -4.7 A
--
4.9
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
--
420
550
pF
Coss
Output Capacitance
--
195
250
pF
Crss
Reverse Transfer Capacitance
--
45
60
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = -30 V, ID = -5.7 A,
RG = 25 Ω
(Note 4)
--
6.5
25
ns
tr
Turn-On Rise Time
--
40
90
ns
td(off)
Turn-Off Delay Time
--
15
40
ns
tf
Turn-Off Fall Time
--
45
100
ns
Qg
Total Gate Charge
VDS = -48 V, ID = -11.4 A,
VGS = -10 V
(Note 4)
--
13
17
nC
Qgs
Gate-Source Charge
--
2.0
--
nC
Qgd
Gate-Drain Charge
--
6.3
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-9.4
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
-37.6
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -9.4 A
--
--
-4.0
V
trr
Reverse Recovery Time
VGS = 0 V, IS = -11.4 A,
dIF / dt = 100 A/µs
--
83
--
ns
Qrr
Reverse Recovery Charge
--
0.26
--
µC
©2000 Fairchild Semiconductor Corporation
FQD11P06 / FQU11P06 Rev. C2
FQU11P06
FQU11P06TU
I-PAK
N/A
N/A
70 units
Tube


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