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SI2377EDS 데이터시트(PDF) 4 Page - Vishay Siliconix |
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SI2377EDS 데이터시트(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 65905 S10-0542-Rev. A, 08-Mar-10 Vishay Siliconix Si2377EDS New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 - 50 - 25 0 25 50 75 100 125 150 VGS =4.5 V,2.5 V;ID =3.2 A VGS =1.8V;ID =1.5 A TJ -Junction Temperature (°C) VGS - Gate-to-Source Voltage (V) 0.00 0.03 0.06 0.09 0.12 0.15 0.18 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 ID = 3.2 A; TJ = 25 °C ID =0.5 A; TJ =25 °C ID = 3.2 A; TJ = 125 °C ID =0.5 A; TJ = 125 °C 0 10 20 30 40 Time (s) 10 1000 0.1 0.01 0.001 100 1 Soure-Drain Diode Forward Voltage Threshold Voltage Safe Operating Area, Junction-to-Ambient 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 25 °C TJ = 150 °C VSD -Source-to-Drain Voltage (V) 0.3 0.4 0.5 0.6 0.7 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 100 ms Limited byRDS(on)* BVDSS Limited 1ms 100 µs 10 ms 1s,10s DC |
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