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MTB090N06N3 데이터시트(PDF) 5 Page - Cystech Electonics Corp. |
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MTB090N06N3 데이터시트(HTML) 5 Page - Cystech Electonics Corp. |
5 / 9 page CYStech Electronics Corp. Spec. No. : C420N3 Issued Date : 2014.01.24 Revised Date : Page No. : 5/9 MTB090N06N3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 10 100 1000 0.1 1 10 100 VDS, Drain-Source Voltage(V) C oss Ciss Crss Threshold Voltage vs Junction Tempearture 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 ID, Drain Current(A) VDS=15V Pulsed Ta=25°C Gate Charge Characteristics 0 2 4 6 8 10 0 2 468 Qg, Total Gate Charge(nC) ID=3.9A VDS=48V VDS=30V Maximum Safe Operating Area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) DC 10ms 100ms 1ms 100μs RDS(ON) Limit TA=25°C, Tj=150°, VGS=10V RθJA=100°C/W, Single Pulse Maximum Drain Current vs Junction Temperature 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) TA=25°C, VGS=10V, RθJA=100°C/W |
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