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2SC4228 데이터시트(PDF) 2 Page - NEC |
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2SC4228 데이터시트(HTML) 2 Page - NEC |
2 / 8 page 2SC4228 2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 10 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 35 mA Total Power Dissipation PT 150 mW Junction Temperature Tj 150 ˚C Storage Temperature Tstg –65 to +150 ˚C ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 1.0 µAVCB = 10 V, IE = 0 Emitter Cutoff Current IEBO 1.0 µAVEB = 1 V, IC = 0 DC Current Gain hFE 50 100 250 VCE = 3 V, IC = 5 mA*1 Gain Bandwidth Product fT 5.5 8.0 GHz VCE = 3 V, IC = 5 mA, f = 2 GHz Feedback Capacitance Cre 0.3 0.7 pF VCB = 3 V, IE = 0, f = 1 MHz*2 Insertion Power Gain |S21e|2 5.5 7.5 dB VCE = 3 V, IC = 5 mA, f = 2 GHz Noise Figure NF 1.9 3.2 dB VCE = 3 V, IC = 5 mA, f = 2 GHz *1 Pulse Measurement; PW ≤ 350 µs, Duty Cycle ≤ 2 % *2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. hFE Classification Rank R43 R44 R45 Marking R43 R44 R45 hFE 50 to 100 80 to 160 125 to 250 |
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