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2SD1654 데이터시트(PDF) 2 Page - Savantic, Inc. |
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2SD1654 데이터시트(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1654 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=0.1A; RBE=; 800 V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 1500 VCEsat Collector-emitter saturation voltage IC=2.5A;IB=0.8A 8.0 V VBEsat Base-emitter saturation voltage IC=2.5A;IB=0.8A 1.5 V IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA ICBO Collector cut-off current VCB=800V; IE=0 10 µA hFE DC current gain IC=0.5 A ; VCE=5V 8 fT Transition frequency IC=0.5 A ; VCE=10V 3 MHz tf Fall time IC=3A;IB1=0.8A;IB2=-1.6A VCC=200V;RL=66.7@ 0.7 µs |
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