Si85xx

8

Preliminary Rev. 0.4

Figure 1. SOIC-20 Thermal Derating Curve, Dependence of Safety Limiting Values

with Case Temperature per DIN EN 60747-5-2

Table 7. Thermal Characteristics

Parameter

Symbol

Test Condition

SOIC-20

4x4 mm

QFN

Unit

IC Junction-to-Air Thermal Resistance



JA

85

55

°C/W

Table 8. Absolute Maximum Ratings1

Parameter

Symbol

Min

Typ

Max

Units

Storage temperature

–65

—

+150

°C

Ambient temperature under bias

–40

—

+125

°C

Junction Temperature

—

—

150

°C

Supply voltage

—

—

5.75

V

Voltage on any pin with respect to ground

(not including IIN, IOUT)

–0.5

—

VDD + 0.5

V

Output Current Drive

——

10

mA

Lead solder temperature (10 s)

—

—

260

ºC

Maximum Input Current Rate of Change

—

—

1000

A/µs

Maximum Peak AC Input Current Limit

—

—

200

A

Thermal Limit (DC Current)2

—

—

30

A

Maximum Isolation Voltage (QFN)

—

—

1400

Maximum Isolation Voltage (SOIC-20)

—

—

6000

ESD (CDM)

JEDEC (JESD22-C101C)

–1.5

+1.5

kV

ESD (HBM)

JEDEC (JESD22-A114E)

–2500

+2500

V

ESD (MM)

JEDEC (JESD22-A115A)

–250

+ 250

V

Notes:

1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be

restricted to conditions as specified in the operational sections of this data sheet. Exposure to absolute maximum rating

conditions for extended periods may affect device reliability.

2. Refer to “AN329: Extending the Full-Scale Range of the Si85xx” for more information.

0200

150

100

50

40

20

0

Case Temperature (ºC)

10

30

VDD = 5.5 V

IIN to IOUT = 20 Amps