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BD139-10 데이터시트(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

부품명 BD139-10
상세설명  NPN Plastic Encapsulated Transistor
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제조업체  SECOS [SeCoS Halbleitertechnologie GmbH]
홈페이지  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

BD139-10 데이터시트(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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BD135 / BD137 / BD139
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
07-Mar-2012 Rev. A
Page 2 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Collector to Base
Breakdown Voltage
BD135
V(BR)CBO
45
-
-
V
IC=0.1mA, IE=0
BD137
60
-
-
BD139
80
-
-
Collector to Emitter
Breakdown Voltage
BD135
VCEO(SUS)
*
45
-
-
V
IC=0.03A, IB=0
BD137
60
-
-
BD139
80
-
-
Emitter to Base Breakdown Voltage
V(BR)EBO
5
-
-
V
IE=0.1mA, IC=0
Collector Cut–Off Current
ICBO
-
-
0.1
µ
A
VCB=30V, IE=0
Emitter Cut–Off Current
IEBO
-
-
10
µ
A
VEB=5V, IC=0
DC Current Gain
hFE (1)
*
40
-
250
VCE=2V, IC=150mA
hFE (2)
*
25
-
-
VCE=2V, IC=5mA
hFE (3)
*
25
-
-
VCE=2V, IC=500mA
Collector to Emitter Saturation Voltage
VCE(sat)
*
-
-
0.5
V
IC=500mA, IB=50mA
Collector Output Capacitance
VBE
*
-
-
1
V
VCE=2V, IC=500mA
*Pulse test:pulse width≦350µs, duty cycle≦2.0%


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