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2SD998 데이터시트(PDF) 2 Page - Savantic, Inc. |
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2SD998 데이터시트(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD998 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 120 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 2.5 V VBE Base-emitter on voltage IC=0.5A;VCE=5V 1.5 V ICBO Collector cut-off current VCB=120V; IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE DC current gain IC=1A ; VCE=5V 55 160 fT Transition frequency IC=1A ; VCE=5V 12 MHz COB Collector output capacitance f=1MHz;VCB=10V 170 pF hFE Classifications R O 55-110 80-160 |
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