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STB95N4F3 데이터시트(PDF) 5 Page - STMicroelectronics |
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STB95N4F3 데이터시트(HTML) 5 Page - STMicroelectronics |
5 / 20 page STB95N4F3, STD95N4F3, STP95N4F3 Electrical characteristics Doc ID 13288 Rev 4 5/20 Table 6. Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=20 V, ID= 40 A, RG=4.7 Ω, VGS=10 V (see Figure 16) - 15 50 - ns ns td(off) tf Turn-off delay time Fall time VDD=20 V, ID= 40 A, RG=4.7 Ω, VGS=10 V (see Figure 16) - 40 15 - ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 80 320 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD=80 A, VGS=0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=80 A, di/dt = 100 A/µs, VDD= 30 V, Tj=150 °C (see Figure 15) - 45 60 2.8 ns nC A |
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