전자부품 데이터시트 검색엔진 |
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BZX55C18 데이터시트(PDF) 1 Page - EIC discrete Semiconductors |
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BZX55C18 데이터시트(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page BZX55C2V4 ~ BZX55C200 SILICON ZENER DIODES VZ : 2.4 - 200 Volts P D : 500 mW FEATURES : * Complete 2.4 to 200 Volts * High surge current capability * High peak reverse power dissipation * High reliability * Low leakage current MECHANICAL DATA * Case : Molded glass * Lead : Axial lead solderable per MIL-STD-202, method 208 guaranteed * Polarity : Color band denotes cathode end. When operated in zener mode, cathode will be positive with respect to anode * Mounting position : Any * Weight : 0.13 gram MAXIMUM RATINGS Rating at 25 °C ambient temperature unless otherwise specified Rating Symbol Value Unit Power Dissipation (Note) PD 500 mW Maximum Forward Voltage at IF =100 mA VF 1.0 V Maximum Thermal Resistance Junction to Ambient Air (Note1) RθJA 0.3 K / mW Junction Temperature Range Tj - 55 to + 175 °C Storage Temperature Range Ts - 55 to + 175 °C Note : 1. Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. UPDATE : JANUARY 18, 2002 DO - 35 Dimensions in inches and ( millimeters ) 0.079(2.0 )max. 0.150 (3.8) max. 0.020 (0.52)max. 1.00 (25.4) min. 1.00 (25.4) min. |
유사한 부품 번호 - BZX55C18 |
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유사한 설명 - BZX55C18 |
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