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NE32584 데이터시트(PDF) 1 Page - California Eastern Labs

부품명 NE32584
상세설명  ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
Download  6 Pages
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제조업체  CEL [California Eastern Labs]
홈페이지  http://www.cel.com
Logo CEL - California Eastern Labs

NE32584 데이터시트(HTML) 1 Page - California Eastern Labs

  NE32584 Datasheet HTML 1Page - California Eastern Labs NE32584 Datasheet HTML 2Page - California Eastern Labs NE32584 Datasheet HTML 3Page - California Eastern Labs NE32584 Datasheet HTML 4Page - California Eastern Labs NE32584 Datasheet HTML 5Page - California Eastern Labs NE32584 Datasheet HTML 6Page - California Eastern Labs  
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FEATURES
• VERY LOW NOISE FIGURE:
0.45 dB Typical at 12 GHz
• HIGH ASSOCIATED GAIN:
12.5 dB Typical at 12 GHz
•LG
≤ 0.20 µm, WG = 200 µm
• LOW COST METAL CERAMIC PACKAGE
• TAPE & REEL PACKAGING OPTION AVAILABLE
ULTRA LOW NOISE
PSEUDOMORPHIC HJ FET
NE32584C
DESCRIPTION
The NE32584C is a pseudomorphic Hetero-Junction FET that
uses the junction between Si-doped AlGaAs and undoped
InGaAs to create very high mobility electrons. The device
features mushroom shaped TiAl gates for decreased gate
resistance and improved power handling capabilities. The
mushroom gate also results in lower noise figure and high
associated gain. This device is housed in an epoxy-sealed,
metal/ceramic package and is intended for high volume con-
sumer and industrial applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
PART NUMBER
NE32584C
PACKAGE OUTLINE
84C
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NF1
Optimum Noise Figure, VDS = 2 V, IDS = 10 mA, f = 12 GHz
dB
0.45
0.55
GA1
Associated Gain, VDS = 2 V, IDS = 10 mA, f = 12 GHz
dB
11.0
12.5
IDSS
Saturated Drain Current, VDS = 2 V,VGS = 0 V
mA
20
60
90
VP
Pinch-off Voltage, VDS = 2 V, IDS = 100
µA
V
-2.0
-0.7
-0.2
gm
Transconductance, VDS = 2 V, ID = 10 mA
mS
45
60
IGSO
Gate to Source Leakage Current, VGS = -3 V
µA
0.5
10.0
RTH (CH-A)
Thermal Resistance (Channel to Ambient)
°C/W
750
RTH (CH-C)
Thermal Resistance (Channel to Case)
°C/W
350
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 2 V, IDS = 10 mA
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening tuned for the "generic" type but not each specimen.
Frequency, f (GHz)
California Eastern Laboratories
GA
NF
1.2
1.0
0.8
0.6
0.4
0.2
0
2
4
6
8
10
20
30
24
21
18
15
12
9
6


유사한 부품 번호 - NE32584

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유사한 설명 - NE32584

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