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Document Number: 91028

4

S11-1046-Rev. D, 30-May-11

This document is subject to change without notice.

IRF620S, SiHF620S

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

750

600

450

0

150

300

C

iss

C

rss

C

oss

V

C

C

C

91028_05

20

16

12

8

0

4

0

315

9

I

V

V

For test circuit

see figure 13

V

91028_06

12

6

0.5

1.5

1.3

1.0

0.8

25

150

V

91028_07

Operation in this area limited

by R

DS(on)

T

T

Single Pulse

0.1

2

5

0.1

1

2

5

10

2

5

25

110

25

25

25

91028_08