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STGFL6NC60DI 데이터시트(PDF) 4 Page - STMicroelectronics |
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STGFL6NC60DI 데이터시트(HTML) 4 Page - STMicroelectronics |
4 / 18 page Electrical characteristics STGBL6NC60DI, STGDL6NC60DI, STGPL6NC60DI, STGFL6NC60DI 4/18 Doc ID 15536 Rev 2 2 Electrical characteristics (Tj=25 °C unless otherwise specified) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE = 0) IC = 1 mA 600 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC= 1.5 A VGE = 15 V, IC= 3 A VGE= 15 V, IC= 3 A,Tj=125°C 1.9 2.2 2 2.9 V V V VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA 3.75 5.75 V ICES Collector cut-off current (VGE = 0) VCE = 600 V VCE = 600 V, Tj= 125 °C 50 5 µA mA IGES Gate-emitter leakage current (VCE = 0) VGE = ±20 V ±100 nA gfs Forward transconductance VCE = 15 V, IC= 3 A 3 S Table 5. Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE = 0 - 208 32.5 5.4 - pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 390 V, IC = 3 A, VGE = 15 V (see Figure 17) - 12 2.6 4.9 - nC nC nC |
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