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TS4999EIJT 데이터시트(PDF) 9 Page - STMicroelectronics |
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TS4999EIJT 데이터시트(HTML) 9 Page - STMicroelectronics |
9 / 36 page TS4999 Electrical characteristics 9/36 . Table 9. VCC = +3.6V, GND = 0V, Tamb = 25°C (unless otherwise specified) Symbol Parameter Conditions Min. Typ. Max. Unit ICC Supply current No input signal, no load, both channels 3.5 5.5 mA ISTANDBY Standby current No input signal, Vstdby = GND 1 2 μA Voo Output offset voltage Floating inputs, RL = 8 Ω, G = 3.5dB, 3D effect off 20 mV Po Output power THD = 1% max, F = 1kHz, RL = 4Ω 1.15 W THD = 1% max, F = 1kHz, RL = 8Ω 0.7 THD = 10% max, F = 1kHz, RL = 4Ω 1.45 W THD = 10% max, F = 1kHz, RL = 8Ω 0.86 W THD+N Total harmonic distortion + noise Po = 0.45W/Ch, G = 6dB, F=1kHz, RL = 8Ω 0.15 % Efficiency Efficiency per channel Po = 1.15 WRMS, RL = 4Ω +15µH 82 % Po = 0.7 WRMS, RL = 8Ω + 15µH 89 PSRR Power supply rejection ratio with inputs grounded Cin = 1µF (1),3D effects off F = 217Hz, RL = 8Ω, gain = 6dB, Vripple = 200mVpp, inputs grounded 64 dB Crosstalk Channel separation F = 1kHz, RL = 8Ω, 3D effects off 102 dB CMRR Common mode rejection ratio Cin=1µF, F = 217Hz, RL = 8Ω, gain = 6dB, ΔVIC = 200mVpp, 3D effects off 55 dB Gain Gain value with no load G1 = G0 = "0" 3 3.5 4 dB G1 = "0" & G0 = "1" 5.5 6 6.5 G1 = "1" & G0 = "0" 9 9.5 10 G1 = G0 = "1" 11.5 12 12.5 ZIN Single-ended input impedance referred to GND G1 = G0 = 3D = "0" or G1 = "0" & G0 = "1" & 3D = "0" or G1 = "1" & G0 = "0" & 3D = "0" 24 30 36 k Ω G1 = "1" & G0 = "1" & 3D = "0" 12 15 18 k Ω G1 = G0 = "0" & 3D = "1" or G1 = "0" & G0 = "1" & 3D = "1" or G1 = "1" & G0 = "0" & 3D = "1" 13.5 17.1 20.5 k Ω G1 = "1" & G0 = "1" & G3D = "1" 6.5 8.6 10.5 k Ω FPWM Pulse width modulator base frequency 190 280 370 kHz SNR Signal to noise ratio Po = 0.67W, A-weighting, RL = 8Ω, Gain = 6dB, 3D effects OFF 97 dB tWU Wake-up time Total wake-up time(2) 7.5 11.3 15 ms |
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