FQD19N10 datasheet(1/8 Pages) FAIRCHILD

부품명	FQD19N10

상세설명	N-Channel QFET짰 MOSFET 100 V, 15.6 A, 100 m廓

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제조업체	FAIRCHILD [Fairchild Semiconductor]

홈페이지	http://www.fairchildsemi.com

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November 2013

FQD19N10

N-Channel QFET® MOSFET

100 V, 15.6 A, 100 mΩ

Description

FQD19N10 Rev. C1

www.fairchildsemi.com

1

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to

reduce on-state resistance, and to provide superior

switching performance and high avalanche energy

strength. These devices are suitable for switched mode

power supplies, audio amplifier, DC motor control, and

variable switching power applications.

Features

Absolute Maximum Ratings T

C = 25

oC unless otherwise noted.

Thermal Characteristics

Symbol

Parameter

FQD19N10TM

Unit

RJC

Thermal Resistance, Junction to Case, Max.

2.5

oC/W

RJA

Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.

110

Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.

50

• 15.6 A, 100 V, RDS(on) = 100 mΩ (Max.) @ VGS = 10 V,

ID = 7.8 A

• Low Gate Charge (Typ. 19 nC)

• Low Crss (Typ. 32 pF)

• 100% Avalanche Tested

D-PAK

G

S

D

G

S

D

Symbol

Parameter

FQD19N10

TM

Unit

VDSS

Drain-Source Voltage

100

V

ID

Drain Current

- Continuous (TC = 25°C)

15.6

A

- Continuous (TC = 100°C)

9.8

A

IDM

Drain Current

- Pulsed

(Note 1)

62.4

A

VGSS

Gate-Source Voltage

 25

V

EAS

Single Pulsed Avalanche Energy

(Note 2)

220

mJ

IAR

Avalanche Current

(Note 1)

15.6

A

EAR

Repetitive Avalanche Energy

(Note 1)

5.0

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

6.0

V/ns

PD

Power Dissipation (TA = 25°C) *

2.5

W

Power Dissipation (TC = 25°C)

50

W

- Derate above 25°C

0.4

W/°C

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

°C

TL

Maximum

Lead Temperature for Soldering,

1/8" from

Case for 5 Seconds

300

°C

유사한 부품 번호 - FQD19N10

제조업체	부품명	데이터시트	상세설명
Fairchild Semiconductor	FQD19N10	588Kb / 9P	100V N-Channel MOSFET
	FQD19N10	545Kb / 8P	N-Channel QFET MOSFET
	FQD19N10	684Kb / 9P	100V N-Channel MOSFET
Inchange Semiconductor ...	FQD19N10	293Kb / 2P	isc N-Channel MOSFET Transistor 2023-10-07
Guangdong Youtai Semico...	FQD19N10	1Mb / 5P	100V N -Channel MOSFET

More results

유사한 설명 - FQD19N10

제조업체	부품명	데이터시트	상세설명
Fairchild Semiconductor	FQD19N10LTM	1Mb / 8P	N-Channel QFET짰 MOSFET 100 V, 15.6 A, 100 m廓
	FQD17N08LTM	1Mb / 8P	N-Channel QFET짰 MOSFET 80 V, 12.9 A, 100 m廓
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	FQD10N20LTM	765Kb / 8P	N-Channel QFET짰 MOSFET 200 V, 7.6 A, 360 m廓
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More results

FQD19N10 데이터시트(PDF) 1 Page - Fairchild Semiconductor

FQD19N10 데이터시트(HTML) 1 Page - Fairchild Semiconductor

유사한 부품 번호 - FQD19N10

유사한 설명 - FQD19N10

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