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FQD10N20LTM 데이터시트(PDF) 1 Page - Fairchild Semiconductor |
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1 / 8 page November 2013 Thermal Characteristics Symbol Parameter FQD10N20LTM Unit RJC Thermal Resistance, Junction to Case, Max. 2.48 oC/W RJA Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. 50 FQD10N20L N-Channel QFET® MOSFET 200 V, 7.6 A, 360 mΩ Description www.fairchildsemi.com 1 This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 7.6 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 3.8 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 14 pF) • 100% Avalanche Tested • Low Level Gate Drive Requirements Allowing Direct Operation Form Logic Drivers Absolute Maximum Ratings T C = 25°C unless otherwise noted. D-PAK G S D G S D Symbol Parameter FQD10N20L TM Unit VDSS Drain-Source Voltage 200 V ID Drain Current 7.6 A - Continuous (TC = 25°C) - Continuous (TC = 100°C) 4.8 A IDM Drain Current - Pulsed (Note 1) 30.4 A VGSS Gate-Source Voltage ± 20 V EAS Single Pulsed Avalanche Energy (Note 2) 180 mJ IAR Avalanche Current (Note 1) 7.6 A EAR Repetitive Avalanche Energy (Note 1) 5.1 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TA = 25°C) * 2.5 W Power Dissipation (TC = 25°C) 51 W - Derate above 25°C 0.4 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering, 1/8” from case for 5 seconds 300 °C ©2000 Fairchild Semiconductor Corporation FQD10N20L Rev. C1 |
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