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IRL2203NSTRLPBF 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRL2203NSTRLPBF
상세설명  Advanced Process Technology
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRL2203NSTRLPBF 데이터시트(HTML) 1 Page - International Rectifier

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IRL2203NSPbF
IRL2203NLPbF
HEXFET® Power MOSFET
10/01/10
www.irf.com
1
VDSS = 30V
RDS(on) = 7.0mΩ
ID = 116A
‡
S
D
G
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRL2203NL) is available for low-profile applications.
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l 100% RG Tested
l Lead-Free
Description
TO-262
IRL2203NLPbF
D2Pak
IRL2203NSPbF
Absolute Maximum Ratings
Symbol
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
™
PD @TA = 25°C Power Dissipation
W
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
IAR
Avalanche Current
Ù
A
EAR
Repetitive Avalanche Energy
™
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
Operating Junction and
Storage Temperature Range
TSTG
Soldering Temperature, for 10 seconds
Thermal Resistance
Symbol
Parameter
Typ
Max
Units
RθJC
Junction-to-Case
k
–––
0.85
RθJA
Junction-to-Ambient (PCB mount, steady state)
jk
–––
40
°C/W
300 (1.6mm from case)
5.0
°C
-55 to + 175
TJ
3.8
18
60
180
1.2
± 16
Max
116
i
82
400
PD - 95219A


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