BF823 datasheet(2/3 Pages) CDIL

부품명	BF823

상세설명	SILICON EPITAXIAL TRANSISTORS

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제조업체	CDIL [Continental Device India Limited]

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Continental Device India Limited

Data Sheet

Page 2 of 3

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

BF821

BF823

Collector–base voltage (open emitter)

–VCB0 max. 300

250 V

Collector–emitter voltage (open base)

–VCE0 max. —

250 V

Collector–emitter voltage (RBE = 2,7 kW )–VCER max. 300

— V

Emitter–base voltage (open collector)

–VEB0 max.

5

V

Collector current (d.c.)

–I C

max.

50

mA

Collector current (peak value)

–ICM max.

100

mA

Total power dissipation

up to Tamb = 25 °C

Ptot

max.

250

mW

Storage temperature

Tstg

–55 to +150

° C

Junction temperature

Tj

max.

150

° C

THERMAL RESISTANCE

From junction to ambient

Rth j–a =

500

K/W

CHARACTERISTICS

Tj = 25 °C unless otherwise specified

BF821

BF823

Collector cut–off current

IE = 0; –VCB = 200V

–ICB0 <10

10 nA

Collector–emitter voltage

RBE = 2,7 kW ; VCE = 250 V

–ICER <50

50 nA

RBE = 2,7kW ; VCE = 200V; Tj = 150°C

–ICER <10

10 mA

Saturation voltage

–IC = 30 mA; –lB = 5 mA

–VCEsat<

0,8

V

D.C. current gain

IC = 25 mA; –VCE = 20 V

hFE

>50

Transition frequency at f = 35 MHz

–IC = 10 mA; —VCE = 10 V

fT

>60

MHz

Feedback capacitance at f = 1 MHz

IC = 0; –VCE = 30 V

Cre

<

1,6

pF

BF821

BF823

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