BC558 datasheet(2/5 Pages) CDIL

부품명	BC558

상세설명	PNP SILICON PLANAR EPITAXIAL TRANSISTORS

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제조업체	CDIL [Continental Device India Limited]

홈페이지	http://www.cdilsemi.com

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2 / 5 page

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

BC556, A, B,

BC557, A, B, C

BC558, A, B, C

TO-92

Plastic Package

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

MAX

UNITS

DC Current Gain

hFE

IC=10µA, VCE=5V

A

B

C

IC=2mA, VCE=5V

BC556

75

475

BC557/558

75

800

A

110

220

B

200

450

C

420

800

IC=100mA, VCE=5V

A

B

C

Collector Emitter Saturation Voltage

VCE (sat)

IC=10mA, IB=0.5mA

0.30

V

IC=100mA, IB=5mA

0.65

V

Base Emitter Saturation Voltage

VBE (sat)

IC=10mA, IB=0.5mA

V

IC=100mA, IB=5mA

V

Base Emitter On Voltage

VBE (on)

IC=2mA, VCE=5V

0.55

0.70

V

IC=10mA, VCE=5V

0.82

V

SMALL SIGNAL CHARACTERISTICS

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

MAX

UNITS

Transistors Frequency

fT

IC=10mA, VCE=5V, f=100MHz

MHz

Collector Output Capacitance

Ccbo

VCB=10V, f=1MHz

6.0

pF

Emitter Input Capacitance

Cib

VEB=0.5V, f=1MHz

pF

Noise Figure

NF

IC=0.2mA, VCE=5V, RS=2 kΩ,

f=1KHz, B=200Hz

10

dB

Small Signal Current

hfe

IC=2mA, VCE=5V, f=1KHz

A

B

C

Input Impedance

hie

IC=2mA, VCE=5V, f=1KHz

A

1.6

4.5

k

Ω

B

3.2

8.5

k

Ω

C

6.0

15

k

Ω

Voltage Feedback Ratio

hre

IC=2mA, VCE=5V, f=1KHz

A

x10

-4

B

x10

-4

C

x10

-4

Out Put Admittance

hoe

IC=2mA, VCE=5V, f=1KHz

A

30

umhos

B

60

umhos

C

110

umhos

BC556_558Rev_2 201205E

1.5

3.0

2.0

330

600

0.9

400

0.7

90

120

200

For Lead Free Parts, Device

Part # will be Prefixed with

"T"

270

9.0

TYP

220

150

C B

E

Continental Device India Limited

Data Sheet

Page 2 of 5

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