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STF20N65M5 데이터시트(PDF) 4 Page - STMicroelectronics

부품명 STF20N65M5
상세설명  N-channel 650 V, 0.160typ., 18 A MDmesh??V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages
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Electrical characteristics
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
4/21
Doc ID 022865 Rev 2
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
650
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 650 V
VDS = 650 V, TC=125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
± 100
nA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
3
4
5
V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 9 A
0.160
0.19
Ω
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
-
1434
38
3.7
-
pF
pF
pF
Co(tr)
(1)
1.
Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
Equivalent
capacitance time
related
VDS = 0 to 520 V, VGS = 0
-
118
-
pF
Co(er)
(2)
2.
Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
Equivalent
capacitance energy
related
-35
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
3.5
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 9 A,
VGS = 10 V
(see Figure 18)
-
36
7.5
18
-
nC
nC
nC


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