SST309-T1 datasheet(4/8 Pages) VISHAY

부품명	SST309-T1

상세설명	N-Channel JFETs

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J/SST/U308 Series

Vishay Siliconix

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Document Number: 70237

S-50149—Rev. H, 24-Jan-05

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

100

0

−5

−4

−3

−1

80

20

0

50

40

10

0

Drain Current and Transconductance

vs. Gate-Source Cutoff Voltage

Gate Leakage Current

Output Characteristics

On-Resistance and Output Conductance

vs. Gate-Source Cutoff Voltage

Common-Source Forward Transconductance

vs. Drain Current

VGS(off) − Gate-Source Cutoff Voltage (V)

VDG − Drain-Gate Voltage (V)

ID − Drain Current (mA)

VGS(off) − Gate-Source Cutoff Voltage (V)

VDS − Drain-Source Voltage (V)

IDSS @ VDS = 10 V, VGS = 0 V

gfs @ VDS = 10 V, VGS = 0 V

f = 1 kHz

gfs

IDSS

TA = −55_C

25_C

125_C

VGS = 0 V

−0.2 V

−0.4 V

−0.6 V

−0.8 V

VGS(off) = −3 V

60

40

−2

30

20

100

−3

−5

−4

−1

80

0

300

240

120

60

0

60

40

20

−2

0

180

rDS @ ID = 1 mA, VGS = 0 V

gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz

rDS

06

312

15

9

IGSS @ 125_C

TA = 125_C

TA = 25_C

200 mA

0.1

1

10

20

16

8

4

0

12

15

0

0.4

0.2

0.8

1

12

6

3

0

9

0.6

−1.0 V

gos

IGSS @ 25_C

0.1 pA

1 pA

10 pA

100 pA

1 nA

10 nA

VDS = 10 V

f = 1 kHz

VGS(off) = −1.5 V

10 mA

Output Characteristics

VDS − Drain-Source Voltage (V)

VGS = 0 V

−1.2 V

−0.4 V

−1.6 V

−0.8 V

30

0

0.4

0.2

0.8

1

24

12

6

0

18

0.6

−2.0 V

−2.4 V

VGS(off) = −3 V

IG @ ID = 10 mA

200 mA

유사한 부품 번호 - SST309-T1

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Vishay Siliconix	SST309-T1-E3	102Kb / 8P	Very High System Sensitivity Rev. H, 24-Jan-05

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