전자부품 데이터시트 검색엔진 |
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2SK3218-01 데이터시트(PDF) 1 Page - Fuji Electric |
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2SK3218-01 데이터시트(HTML) 1 Page - Fuji Electric |
1 / 4 page 1 Item Symbol Rating Unit Drain-source voltage VDS 150 Continuous drain current ID ±40 Pulsed drain current ID(puls] ±160 Gate-source voltage VGS ±30 Maximum Avalanche Energy EAV*1 387 Max. power dissipation Ta=25°C PD 1.67 Tc=25°C PD 135 Operating and storage Tch +150 temperature range Tstg Electrical characteristics (Tc =25°C unless otherwise specified) Thermalcharacteristics 2SK3218-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Equivalent circuit schematic Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Gate(G) Source(S) Drain(D) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS=150V VGS=±30V ID=20A VGS=10V ID=20A VDS=25V VCC=48V ID=40A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA mA nA m Ω S pF A V ns µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient 0.93 75.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS Tch=25°C VGS=0V Tch=125°C VDS=0V VDS=25V VGS=0V f=1MHz L=100µH Tch=25°C IF=40A VGS=0V Tch=25°C IF=40A VGS=0V -di/dt=100A/µs Tch=25°C V A A V mJ W W °C °C *1 L=420µH, Vcc=24V 150 2.5 3.0 3.5 1 100 0.1 0.5 10 100 37 43 12.5 25.0 2650 3980 550 830 240 360 21 32 95 142 115 173 60 90 40 0.97 1.46 180 1.30 -55 to +150 TO-220AB 3. Source |
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