The information in this document is subject to change without notice.

©

1998

MOS FIELD EFFECT TRANSISTOR

2SK2981

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DATA SHEET

Document No.

D12355EJ1V0DS00 (1st edition)

Date Published

December 1998 NS CP(K)

Printed in Japan

PACKAGE DRAWING (Unit : mm)

TO-251(MP-3)

1. Gate

2. Drain

3. Source

4. Fin (Drain)

6.5 ±0.2

5.0 ±0.2

2.3 ±0.2

0.5 ±0.1

0.6 ±0.1

0.6 ±0.1

1.3 MAX.

12 3

2.3 2.3

4

6.5 ±0.2

5.0 ±0.2

2.3 ±0.2

0.5 ±0.1

1.3 MAX.

2.3 2.3

12

3

4

0.9

MAX.

0.8

MAX.

0.8

1. Gate

2. Drain

3. Source

4. Fin (Drain)

TO-252(MP-3Z) (SURFACE MOUNT TYPE)

EQUIVALENT CIRCUIT

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

DESCRIPTION

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES

• Low on-resistance

• Built-in gate protection diode

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SK2981

TO-251

2SK2981-Z

TO-252

30

V

±20

V

Drain Current (DC)

±20

A

Drain Current (Pulse)

Note

±80

A

20

W

Channel Temperature

150

°C

Storage Temperature

–55 to + 150

°C

Note PW

≤ 10

µs, Duty cycle ≤ 1 %

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.