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STY130NF20D 데이터시트(PDF) 4 Page - STMicroelectronics

부품명 STY130NF20D
상세설명  N-channel 200 V, 0.01 typ., 130 A STripFET II with fast recovery diode Power MOSFET in a Max247 package
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Electrical characteristics
STY130NF20D
4/14
DocID15300 Rev 4
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source breakdown
voltage
V
GS
= 0, I
D
= 1 mA
200
V
I
DSS
Zero gate voltage drain
current
V
GS
= 0, V
DS
= 200 V
10
μA
V
GS
= 0, V
DS
=200 V,
T
C
=125 °C
100
μA
I
GSS
Gate body leakage current
V
DS
= 0, V
GS
= ± 20 V
±
100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 μA2
3
4
V
R
DS(on)
Static drain-source
on- resistance
V
GS
= 10 V, I
D
= 65 A
0.01
0.012
Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
iss
Input capacitance
V
GS
=0, V
DS
= 25 V,
f=1 MHz,
-
11100
-
pF
C
oss
Output capacitance
-
2190
-
pF
C
rss
Reverse transfer
capacitance
-334
-
pF
C
o(tr)
(1)
1.
C
o(er)
is a constant capacitance value that gives the same stored energy as C
oss
while V
DS
is rising from 0
to 80% V
DSS
Equivalent capacitance time
related
V
GS
=0, V
DS
= o to 160
-
1525
-
pF
C
o(er)
(2)
2.
C
o(tr)
is a constant capacitance value that gives the same charging time as C
oss
while V
DS
is rising from 0
to 80% V
DSS
Equivalent capacitance
energy related
-1139
-
pF
R
G
Intrinsic gate resistance
f=1 MHz, I
D
=0
-
1.4
-
Q
g
Total gate charge
V
DD
=160 V, I
D
= 130 A
V
GS
= 10 V
(see Figure 16)
-338
-
nC
Q
gs
Gate-source charge
-
47
-
nC
Q
gd
Gate-drain charge
-
183
-
nC


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