STD2LN60K3 datasheet(4/20 Pages) STMICROELECTRONICS

부품명	STD2LN60K3

상세설명	N-channel 600 V, 4typ., 2 A SuperMESH3 Power MOSFET in DPAK, TO-220FP and IPAK packages

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Electrical characteristics

STD2LN60K3, STF2LN60K3, STU2LN60K3

4/20

Doc ID 023500 Rev 1

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

600

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 600 V

VDS = 600 V, TC=125 °C

1

50

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

± 10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 50 µA

3

3.75

4.5

V

RDS(on

Static drain-source on-

resistance

VGS = 10 V, ID = 1 A

4

4.5

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz, VGS = 0

-

235

22

3.5

-

pF

Co(tr)

(1)

1.

Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss

when VDS increases from 0 to 80% VDSS

Eq. capacitance time

-14

-

pF

Co(er)

(2)

2.

Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as

Coss when VDS increases from 0 to 80% VDSS

Eq. capacitance

energy related

-10

-

pF

RG

Intrinsic gate

resistance

f = 1 MHz open drain

-

7

-

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 480 V, ID = 1 A,

VGS = 10 V

(see Figure 18)

-

12

1.8

7.7

-

nC

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