FQD4N20TF datasheet(1/8 Pages) FAIRCHILD

부품명	FQD4N20TF

상세설명	N-Channel QFET MOSFET 200 V, 3.0 A, 1.4

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제조업체	FAIRCHILD [Fairchild Semiconductor]

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November 2013

Thermal Characteristics

FQD4N20

N-Channel QFET® MOSFET

200 V, 3.0 A, 1.4 Ω

Description

FQD4N20 Rev. C1

www.fairchildsemi.com

1

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary planar

stripe and DMOS technology. This advanced MOSFET

technology has been especially tailored to reduce on-state

resistance, and to provide superior switching performance

and high avalanche energy strength. These devices are

suitable for switched mode power supplies, active power

factor correction (PFC), and electronic lamp ballasts.

Features

• 3.0 A, 200 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V,

ID = 1.5 A

• Low Gate Charge (Typ. 5.0 nC)

• Low Crss (Typ. 5.0 pF)

• 100% Avalanche Tested

Absolute Maximum Ratings T

C = 25°C unless otherwise noted.

D-PAK

G

S

D

G

S

D

Symbol

Parameter

FQD4N20TM

Unit

RJC

Thermal Resistance, Junction to Case, Max.

4.17

oC/W

RJA

Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.

110

Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.

50

FQD4N20TM

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Maximum Lead Temperature for Soldering,

1/8" from Case for 5 Seconds.

유사한 부품 번호 - FQD4N20TF

제조업체	부품명	데이터시트	상세설명
Fairchild Semiconductor	FQD4N20	701Kb / 9P	200V N-Channel MOSFET
Inchange Semiconductor ...	FQD4N20	304Kb / 2P	isc N-Channel MOSFET Transistor 2023-10-08
Fairchild Semiconductor	FQD4N20L	519Kb / 9P	200V LOGIC N-Channel MOSFET
	FQD4N20L	526Kb / 9P	200V LOGIC N-Channel MOSFET
	FQD4N20LTF	526Kb / 9P	200V LOGIC N-Channel MOSFET

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FQD4N20TF 데이터시트(PDF) 1 Page - Fairchild Semiconductor

FQD4N20TF 데이터시트(HTML) 1 Page - Fairchild Semiconductor

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