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2SC1213A 데이터시트(PDF) 2 Page - Hitachi Semiconductor |
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2SC1213A 데이터시트(HTML) 2 Page - Hitachi Semiconductor |
2 / 5 page 2SC1213, 2SC1213A 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC1213 2SC1213A Unit Collector to base voltage V CBO 35 50 V Collector to emitter voltage V CEO 35 50 V Emitter to base voltage V EBO 44V Collector current I C 500 500 mA Collector power dissipation P C 400 400 mW Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Electrical Characteristics (Ta = 25°C) 2SC1213 2SC1213A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V (BR)CBO 35 — — 50 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown voltage V (BR)CEO 35 — — 50 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V (BR)EBO 4— — 4 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 0.5 — — 0.5 µAV CB = 20 V, IE = 0 DC current tarnsfer ratio h FE* 1 60 — 320 60 — 320 V CE = 3 V, IC =10 mA h FE 10 — — 10 — — V CE = 3 V, I C = 500 mA* 2 Collector to emitter saturation voltage V CE(sat) — 0.2 0.6 — 0.2 0.6 V I C = 150 mA, I B = 15 mA* 2 Base to emitter voltage V BE — 0.64 — — 0.64 — V V CE = 3 V, IC = 10 mA Notes: 1. The 2SC1213 and 2SC1213A are grouped by h FE as follows. 2. Pulse test BC D 60 to 120 100 to 200 160 to 320 |
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