전자부품 데이터시트 검색엔진 |
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2SC1515K 데이터시트(PDF) 2 Page - Hitachi Semiconductor |
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2SC1515K 데이터시트(HTML) 2 Page - Hitachi Semiconductor |
2 / 6 page 2SC1515 (K) 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V CBO 200 V Collector to emitter voltage V CES 200 V V CEO 150 V Emitter to base voltage V EBO 5V Collector current I C 50 mA Collector power dissipation P C 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter breakdown voltage V (BR)CES 200 — — V I C = 10 µA, RBE = 0 V (BR)CEO 150 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V (BR)EBO 5— — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 0.1 µAV CB = 20 V, IE = 0 DC current transfer ratio h FE 30 — 300 V CE = 6 V, IC = 10 mA Collector to emitter saturation voltage V CE(sat) — — 1.0 V I C = 10 mA, IB = 1 mA Base to emitter saturation voltage V BE(sat) — — 1.5 V I C = 10 mA, IB = 1 mA Gain bandwidth product f T 60 — — MHz V CE = 6 V, IC = 10 mA Collector output capacitance Cob — — 10 pF V CB = 6 V, IE = 0, f = 1 MHz |
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