전자부품 데이터시트 검색엔진 |
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2SC1907 데이터시트(PDF) 2 Page - Hitachi Semiconductor |
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2SC1907 데이터시트(HTML) 2 Page - Hitachi Semiconductor |
2 / 7 page 2SC1907 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V CBO 30 V Collector to emitter voltage V CEO 19 V Emitter to base voltage V EBO 2V Collector current I C 50 mA Emitter current I E –50 mA Collector power dissipation P C 300 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V (BR)CBO 30 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown voltage V (BR)CEO 19 — — V I C = 3 mA, RBE = ∞ Emitter to base breakdown voltage V (BR)EBO 2— — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 0.5 µAV CB = 10 V, IE = 0 DC current transfer ratio h FE 40 — — V CE = 10 V, IC = 10 mA Collector to emitter saturation voltage V CE(sat) — 0.2 1.0 V I C = 20 mA, IB = 4 mA Collector output capacitance Cob — 1.0 2.0 pF V CB = 10 V, IE = 0, f = 1 MHz Gain bandwidth product f T 900 1100 — MHz V CE = 10 V, IC = 10 mA Base time constant r bb’ • C C —1025 ps V CB = 10 V, IC = 10 mA, f = 31.8 MHz Oscillation output power P out —8 —mW V CB = 10 V, IC = 10 mA, f = 930 MHz |
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