전자부품 데이터시트 검색엔진 |
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2SC4500S 데이터시트(PDF) 2 Page - Hitachi Semiconductor |
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2SC4500S 데이터시트(HTML) 2 Page - Hitachi Semiconductor |
2 / 6 page 2SC4500(L)/(S) 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V CBO 60 V Collector to emitter voltage V CEO 60 V Emitter to base voltage V EBO 7V Collector current I C 1A Collector peak current I C (peak) 2A Collector power dissipation P C 0.8 W P C* 1 8 Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at T C = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Collector to emitter breakdown voltage V (BR)CEO 60 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V (BR)EBO 7— — V I E = 0.1 mA, IC = 0 Collector cutoff current I CBO —— 10 µAV CB = 60 V, IE = 0 DC current transfer ratio h FE 2000 — — V CE = 10 V, IC = 500 mA* 1 Collector to emitter saturation voltage V CE (sat) — — 1.5 V I C = 500 mA, IB = 0.5 mA* 1 Base to emitter saturation voltage V BE (sat) — — 2.0 V I C = 500 mA, IB = 0.5 mA* 1 Turn on time t on — 100 — ns V CC = 12 V, IC = 250 mA, Turn off time t off — 600 — ns I B1 = –IB2 = 5 mA Note: 1. Pulse Test. |
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