MC-4516CB646PF-A80 datasheet(6/16 Pages) NEC

부품명	MC-4516CB646PF-A80

상세설명	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

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Data Sheet M14334EJ2V0DS00

6

MC-4516CB646

DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)

Parameter

Symbol

Test condition

Grade

MIN. MAX.

Unit

Notes

Operating current

ICC1

Burst length = 1

/CAS latency = 2

-A80

800

mA

1

tRC

≥ tRC(MIN.), IO = 0 mA

-A10

800

/CAS latency = 3

-A80

800

-A10

800

Precharge standby current in

ICC2P

CKE

≤ VIL(MAX.), tCK = 15 ns

8

mA

power down mode

ICC2PS CKE

≤ VIL(MAX.), tCK = ∞

8

Precharge standby current in

non power down mode

ICC2NCKE

≥ VIH(MIN.), tCK = 15 ns, /CS ≥ VIH(MIN.),

Input signals are changed one time during 30 ns.

160

mA

ICC2NS CKE

≥ VIH(MIN.), tCK = ∞

Input signals are stable.

64

Active standby current in

ICC3P

CKE

≤ VIL(MAX.), tCK = 15 ns

40

mA

power down mode

ICC3PS CKE

≤ VIL(MAX.), tCK = ∞

32

Active standby current in

ICC3NCKE

≥ VIH(MIN.), tCK = 15 ns, /CS ≥ VIH(MIN.),

240

mA

non power down mode

Input signals are changed one time during 30 ns.

ICC3NS

CKE

≥ VIH(MIN.), tCK = ∞

Input signals are stable.

160

Operating current

ICC4

tCK

≥ tCK(MIN.)

/CAS latency = 2

-A80

960

mA

2

(Burst mode)

IO = 0 mA

-A10

760

/CAS latency = 3

-A80

1,160

-A10

1,000

CBR (Auto) refresh current

ICC5

tRC

≥ tRC(MIN.)

/CAS latency = 2

-A80

1,840

mA

3

-A10

1,840

/CAS latency = 3

-A80

1,840

-A10

1,840

Self refresh current

ICC6

CKE

≤ 0.2 V16

mA

Input leakage current

II(L)

VI = 0 to 3.6 V, All other pins not under test = 0 V

– 8+ 8

µA

Output leakage current

IO(L)

DOUT is disabled, VO = 0 to 3.6 V– 1.5

+ 1.5

µA

High level output voltage

VOH

IO = – 4.0 mA

2.4

V

Low level output voltage

VOL

IO = + 4.0 mA

0.4

V

Notes 1. ICC1 depends on output loading and cycle rates. Specified values are obtained with the output open. In

addition to this, ICC1 is measured on condition that addresses are changed only one time during tCK (MIN.).

2.ICC4 depends on output loading and cycle rates. Specified values are obtained with the output open. In

addition to this, ICC4 is measured on condition that addresses are changed only one time during tCK (MIN.).

3.ICC5 is measured on condition that addresses are changed only one time during tCK (MIN.).

5

유사한 부품 번호 - MC-4516CB646PF-A80

제조업체	부품명	데이터시트	상세설명
Elpida Memory	MC-4516CB646PF-A80	161Kb / 16P	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

More results

유사한 설명 - MC-4516CB646PF-A80

제조업체	부품명	데이터시트	상세설명
Elpida Memory	MC-4516CB647XFA	168Kb / 14P	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
	MC-4516CB646	161Kb / 16P	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
	MC-4516CB647	165Kb / 16P	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
NEC	MC-4516CB647	210Kb / 16P	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
NEC	MC-45V16AD641	160Kb / 6P	16M-WORD BY 64-BIT VirtualChannel SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
Elpida Memory	MC-45V16AB642	156Kb / 16P	16M-WORD BY 64-BIT VirtualChannel??DYNAMIC RAM MODULE UNBUFFERED TYPE
Elpida Memory	MC-4516CA726	163Kb / 16P	16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
NEC	MC-4516CA727	213Kb / 16P	16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
Elpida Memory	MC-4516CA727XFA	168Kb / 14P	16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
NEC	MC-4516CA726	149Kb / 16P	16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

More results

MC-4516CB646PF-A80 데이터시트(PDF) 6 Page - NEC

MC-4516CB646PF-A80 데이터시트(HTML) 6 Page - NEC

유사한 부품 번호 - MC-4516CB646PF-A80

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