2SJ130S datasheet(2/8 Pages) HITACHI

부품명	2SJ130S

상세설명	Silicon P-Channel MOS FET

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제조업체	HITACHI [Hitachi Semiconductor]

홈페이지	http://www.renesas.com/eng

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2 / 8 page

2SJ130(L), 2SJ130(S)

2

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

V

DSS

–300

V

Gate to source voltage

V

GSS

±20

V

Drain current

I

D

–1

A

Drain peak current

I

D(pulse)

–2

A

Body to drain diode reverse drain current

I

DR

–1

A

Channel dissipation

Pch*

1

20

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note:

1. Value at T

C = 25°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Drain to source breakdown

voltage

V

(BR)DSS

–300

—

V

I

D = –10 mA, VGS = 0

Gate to source breakdown

voltage

V

(BR)GSS

±20

——V

I

G = ±100 µA, VDS = 0

Gate to source leak current

I

GSS

——

±10

µAV

GS = ±16 V, VDS = 0

Zero gate voltage drain current I

DSS

—

–100

µAV

DS = –240 V, VGS = 0

Gate to source cutoff voltage

V

GS(off)

–2.0

—

–4.0

V

I

D = –1 mA, VDS = –10 V

Static drain to source on state

resistance

R

DS(on)

—

6.0

8.5

Ω

I

D = –0.5 A, VGS = –10 V*

1

Forward transfer admittance

|y

fs|

0.25

0.4

—

S

I

D = –0.5 A, VDS = –20 V*

1

Input capacitance

Ciss

—

235

—

pF

V

DS = –10 V, VGS = 0,

Output capacitance

Coss

—

65

—

pF

f = 1 MHz

Reverse transfer capacitance

Crss

—

16

—

pF

Turn-on delay time

t

d(on)

—

10

—

ns

I

D = –0.5 A, VGS = –10 V,

Rise time

t

r

—

25

—

ns

R

L = 60 Ω

Turn-off delay time

t

d(off)

—35

—

ns

Fall time

t

f

—45

—

ns

Body to drain diode forward

voltage

V

DF

—

–0.9

—

V

I

F = –1 A, VGS = 0

Body to drain diode reverse

recovery time

t

rr

—

200

—

ns

I

F = –1 A, VGS = 0,

di

F/dt = 50 A/µs

Note:

1. Pulse test

유사한 부품 번호 - 2SJ130S

제조업체	부품명	데이터시트	상세설명
Renesas Technology Corp	2SJ130S	86Kb / 6P	Silicon P Channel MOS FET
Guangdong Kexin Industr...	2SJ130S	46Kb / 2P	Silicon P-Channel MOS FET
Renesas Technology Corp	2SJ130STL-E	86Kb / 6P	Silicon P Channel MOS FET
Guangdong Kexin Industr...	2SJ130S	1Mb / 4P	P-Channel MOSFET

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유사한 설명 - 2SJ130S

제조업체	부품명	데이터시트	상세설명
Hitachi Semiconductor	2SJ221	48Kb / 8P	Silicon P-Channel MOS FET
	2SJ363	37Kb / 7P	Silicon P-Channel MOS FET
	2SJ386	38Kb / 7P	Silicon P-Channel MOS FET
Renesas Technology Corp	2SJ181(L)	109Kb / 7P	Silicon P Channel MOS FET
	2SJ555	109Kb / 10P	Silicon P Channel MOS FET
	2SJ518	102Kb / 9P	Silicon P Channel MOS FET
	2SJ526	110Kb / 10P	Silicon P Channel MOS FET
	2SJ542	107Kb / 10P	Silicon P Channel MOS FET
	2SJ543	107Kb / 10P	Silicon P Channel MOS FET
	2SJ550	95Kb / 9P	Silicon P Channel MOS FET
	2SJ551	95Kb / 9P	Silicon P Channel MOS FET

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2SJ130S 데이터시트(PDF) 2 Page - Hitachi Semiconductor

2SJ130S 데이터시트(HTML) 2 Page - Hitachi Semiconductor

유사한 부품 번호 - 2SJ130S

유사한 설명 - 2SJ130S

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