전자부품 데이터시트 검색엔진 |
|
ST75N75 데이터시트(PDF) 3 Page - Stanson Technology |
|
ST75N75 데이터시트(HTML) 3 Page - Stanson Technology |
3 / 6 page ST75N75 N Channel Enhancement Mode MOSFET 75.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. ST75N75 2011. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 75 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 2.0 4.0 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=48V,VGS=0V 1 uA Drain-source On- Resistance RDS(on) VGS=10V,ID=40A 8 11 m Diode Forward Voltage VSD IS=1.0A,VGS=0V 1.2 V Dynamic Total Gate Charge Qg VDS=4.5V,VDS=70V ID≡75A 30 nC Gate-Source Charge Qgs 29 Gate-Drain Charge Qgd 31 Input Capacitance Ciss VDS =20V,VGS=0V F=1MHz 4780 pF Output Capacitance Coss 540 Reverse TransferCapacitance Crss 180 Turn-On Time td(on) tr VDD=30V,RL= 15 VDS=10V,RG=1 48 nS 36 Turn-Off Time td(off) tf 150 49 |
유사한 부품 번호 - ST75N75 |
|
유사한 설명 - ST75N75 |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |