MC-4516CD641ES-A80 datasheet(6/6 Pages) NEC

부품명	MC-4516CD641ES-A80

상세설명	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM

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제조업체	NEC [NEC]

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Data Sheet M14014EJ5V0DS00

6

MC-4516CD641ES, 4516CD641PS

DC Characteristics (Recommended Operating Conditions unless otherwise noted)

Parameter

Symbol

Test condition

MIN.

MAX.

Unit

Notes

Operating current

ICC1

Burst length = 1, tRC

≥ tRC(MIN.)

/CAS latency = 2

-A80

560

mA

1

-A10

560

/CAS latency = 3

-A80

560

-A10

560

Precharge standby current in

ICC2P

CKE

≤ VIL(MAX.), tCK = 15 ns

8

mA

power down mode

ICC2PS

CKE

≤ VIL(MAX.), tCK = ∞

8

Precharge standby current in

non power down mode

ICC2NCKE

≥ VIH(MIN.), tCK = 15 ns, /CS ≥ VIH(MIN.),

Input signals are changed one time during 30 ns.

160

mA

ICC2NS

CKE

≥ VIH(MIN.), tCK = ∞, Input signals are stable.

64

Active standby current in

ICC3P

CKE

≤ VIL(MAX.), tCK = 15 ns

40

mA

power down mode

ICC3PS

CKE

≤ VIL(MAX.), tCK = ∞

32

Active standby current in

non power down mode

ICC3NCKE

≥ VIH(MIN.), tCK = 15 ns, /CS ≥ VIH(MIN.),

Input signals are changed one time during 30 ns.

240

mA

ICC3NS

CKE

≥ VIH(MIN.), tCK = ∞, Input signals are stable.

160

Operating current

ICC4

tCK

≥ tCK(MIN.), IO = 0 mA

/CAS latency = 2

-A80

700

mA

2

(Burst mode)

-A10

560

/CAS latency = 3

-A80

820

-A10

680

CBR (Auto) refresh current

ICC5

tRC

≥ tRC(MIN.)

/CAS latency = 2

-A80

1,040

mA

3

-A10

1,040

/CAS latency = 3

-A80

1,040

-A10

1,040

Self refresh current

ICC6

CKE

≤ 0.2 V16

mA

Input leakage current

II(L)

VI = 0 to 3.6 V, All other pins not under test = 0 V

– 8+8

µA

Output leakage current

IO(L)

DOUT is disabled, VO = 0 to 3.6 V–3

+3

µA

High level output voltage

VOH

IO = – 4.0 mA

2.4

V

Low level output voltage

VOL

IO = + 4.0 mA

0.4

V

Notes 1. ICC1 depends on output loading and cycle rates. Specified values are obtained with the output open. In

addition to this, ICC1 is measured on condition that addresses are changed only one time during tCK(MIN.).

2.ICC4 depends on output loading and cycle rates. Specified values are obtained with the output open. In

addition to this, ICC4 is measured on condition that addresses are changed only one time during tCK(MIN.).

3. ICC5 is measured on condition that addresses are changed only one time during tCK(MIN.).

5

유사한 부품 번호 - MC-4516CD641ES-A80

제조업체	부품명	데이터시트	상세설명
Elpida Memory	MC-4516CD641ES-A80	154Kb / 16P	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

More results

유사한 설명 - MC-4516CD641ES-A80

제조업체	부품명	데이터시트	상세설명
Elpida Memory	MC-4516CD641ES	154Kb / 16P	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
	MC-4516CD642XS	136Kb / 14P	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
	MC-45V16AD642KS	147Kb / 16P	16M-WORD BY 64-BIT VirtualChannelTM DYNAMIC RAM MODULE (SO DIMM)
NEC	MC-458CB64ESB	126Kb / 6P	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
Elpida Memory	MC-458CB641ES	151Kb / 16P	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
Elpida Memory	MC-458CB64ESB	141Kb / 16P	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
NEC	MC-458CB641ES	137Kb / 6P	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
Elpida Memory	MC-458CB642XS	135Kb / 14P	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
NEC	MC-4516CB64ES	129Kb / 6P	16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
NEC	MC-4516CD64ES	130Kb / 6P	16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM

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MC-4516CD641ES-A80 데이터시트(PDF) 6 Page - NEC

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유사한 부품 번호 - MC-4516CD641ES-A80

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