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STP4435 데이터시트(PDF) 3 Page - Stanson Technology |
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STP4435 데이터시트(HTML) 3 Page - Stanson Technology |
3 / 6 page STP4435 P Channel Enhancement Mode MOSFET - 10A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP4435 2007. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -30 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250 uA -1.0 -3.0 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ± 100 nA Zero Gate Voltage Drain Current IDSS TJ=55℃ VDS=-30V,VGS=0V -1 uA VDS=-30V,VGS=0V -5 Drain-source On-Resistance RDS(on) VGS=-10V, ID=-9.2A VGS=-4.5V, ID=-7.0 0.022 0.030 0.028 0.035 Ω Forward Tran Conductance gfs VDS=-10V,ID=-9.0A 24 S Diode Forward Voltage VSD IS=-2.0A,VGS=0V -0.8 -1.0 V Dynamic Total Gate Charge Qg VDS=-15V,VGS=-10V ID≡-9.A 16 24 nC Gate-Source Charge Qgs 2.3 Gate-Drain Charge Qgd 4.5 Input Capacitance Ciss VDS =-15V,VGS=0V f=1MHz 1650 pF Output Capacitance Coss 350 Reverse TransferCapacitance Crss 235 Turn-On Time td(on) tr VDD=15V,RL=15Ω ID=-1.0A,VGEN=-10V RG=6Ω 16 30 nS 17 30 Turn-Off Time td(off) tf 65 110 35 80 |
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