전자부품 데이터시트 검색엔진 |
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2SK1835 데이터시트(PDF) 6 Page - Hitachi Semiconductor |
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2SK1835 데이터시트(HTML) 6 Page - Hitachi Semiconductor |
6 / 10 page 2SK1835 6 5000 2000 1000 500 200 100 5 0.1 0.2 0.5 1 25 10 Reverse Drain Current I (A) DR GS di / dt = 100 A / s V = 0, Ta = 25°C µ Body to Drain Diode Reverse Recovery Time 1000 10000 100 10 10 20 30 40 50 Ciss Coss V = 0 f = 1 MHz Drain to Source Voltage V GS DS Crss 0 Typical Capacitance vs. Drain to Source Voltage 1000 800 600 400 200 0 40 80 120 160 200 0 4 8 12 16 20 I = 4 A V = 600 V DD 250 V 400 V 250 V V = 600 V 400 V VDS VGS DD Gate Charge g (nc) Q D Dynamic Input Characteristics 1000 500 200 100 50 20 10 0.05 0.1 0.2 0.5 1 2 5 tf tr td (off) Drain Current I (A) D V = 10 V, duty 1 % GS PW = 5 s µ Switching Characteristics td (on) |
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