전자부품 데이터시트 검색엔진 |
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2SK1947 데이터시트(PDF) 5 Page - Hitachi Semiconductor |
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2SK1947 데이터시트(HTML) 5 Page - Hitachi Semiconductor |
5 / 10 page 2SK1947 5 Pulse Test 0 4 812 16 20 Gate to Source Voltage V (V) GS Drain to Source Saturation Voltage vs. Gate to Source Voltage 5 4 3 2 1 I = 10 A D 20 A 50 A Static Drain to Source on State Resistance vs. Drain Current Drain Current I (A) D V = 10 V GS 5 10 20 50 100 200 0.2 0.1 0.05 0.02 0.01 0.005 0.5 2 Pulse Test Static Drain to Source on State Resistance vs. Temperature 0.20 0.16 0.12 0.08 0.04 0 I = 50 A D –40 0 80 120 Case Temperature Tc (°C) 40 Pulse Test V = 10 V 160 GS 10 A, 20 A Forward Transfer Admittance vs. Drain Current Drain Current I (A) D Tc = 25°C 75°C 100 50 20 10 5 2 1 –25°C Pulse Test V = 10 V DS 0.5 1 2 5 10 20 50 |
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