SSBD10100CTF datasheet(1/6 Pages) SILIKRON

부품명	SSBD10100CTF

상세설명	Main Product Characteristics

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제조업체	SILIKRON [Silikron Semiconductor Co.,LTD.]

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SSBD10100CT/ SSBD10100CTF

©Silikron Semiconductor CO., LTD.

2011.5.26

Version: 2.2

page

1of6

www.silikron.com

Main Product Characteristics:

IF

2×5A

VRRM

100V

Tj(max)

150℃

Vf(max)

0.8V

Features and Benefits:



High Junction Temperature



High ESD Protection



High Forward & Reverse Surge capability

Description:

Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC

convertors; this product special design for high forward and reverse surge capability

Absolute Rating:

Symbol

Characterizes

Value

Unit

VRRM

Peak Repetitive Reverse Voltage

100

V

VR(RMS)

RMS Reverse Voltage

70

V

IF(AV)

Average Forward Current

Per diode

5

A

Per device

10

A

IFSM

Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)

180

A

IRRM

Peak Repetitive Reverse Surge Current(Tp=2us)

0.5

A

TJ

Maximum operation Junction Temperature Range

-55~150

℃

Tstg

Storage Temperature Range

-55~150

℃

Thermal Resistance

Symbol

Characterizes

Value

Unit

RθJC

Maximum Thermal Resistance Junction To

Case(per leg)

TO220

2

℃/W

RθJC

TO220F

4

℃/W

Electrical Characterizes @TA=25℃ unless otherwise specified

Symbol

Characterizes

Min

Typ

Max

Unit

Test Condition

VR

Reverse Breakdown Voltage

100

V

IR=0.5mA

VF

Forward Voltage Drop

0.8

V

IF=5A, TJ=25℃

0.7

IF=5A, TJ=125℃

IR

Leakage Current

0.1

mA

VR=100V, TJ=25℃

10

VR=100V, TJ=125℃

TO220F

SSBD10100CTF

TO220

SSBD10100CT

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