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SSF5N50D 데이터시트(PDF) 2 Page - Silikron Semiconductor Co.,LTD. |
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SSF5N50D 데이터시트(HTML) 2 Page - Silikron Semiconductor Co.,LTD. |
2 / 8 page SSF5N50D ©Silikron Semiconductor CO.,LTD. 2012.08.12 Version : 1.0 page 2 of 8 www.silikron.com Thermal Resistance Symbol Characterizes Typ. Max. Units RθJC Junction-to-case③ — 1.2 ℃/W RθJA Junction-to-ambient (t ≤ 10s) ④ — 55 ℃/W Electrical Characterizes @T A=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 500 — — V VGS = 0V, ID = 250μA RDS(on) Static Drain-to-Source on-resistance — 1.5 1.6 Ω VGS=10V,ID = 2.75A — 3.6 — TJ = 125℃ VGS(th) Gate threshold voltage 2 — 4 V VDS = VGS, ID = 250μA — 2.0 — TJ = 125℃ IDSS Drain-to-Source leakage current — — 1 μA VDS = 500V,VGS = 0V — — 50 TJ = 125℃ IGSS Gate-to-Source forward leakage — — 100 nA VGS =30V — — -100 VGS = -30V Qg Total gate charge — 16.9 — nC ID = 5A, VDS=320V, VGS = 10V Qgs Gate-to-Source charge — 6.9 — Qgd Gate-to-Drain("Miller") charge — 3.5 — td(on) Turn-on delay time — 11.1 — ns VGS=10V, VDS=200V, RGEN=25Ω,ID=5A tr Rise time — 15.8 — td(off) Turn-Off delay time — 40.2 — tf Fall time — 19.8 — Ciss Input capacitance — 640 — pF VGS = 0V VDS = 25V ƒ = 1MHz Coss Output capacitance — 67 — Crss Reverse transfer capacitance — 4.8 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 5 A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) — — 17 A V SD Diode Forward Voltage — 0.89 1.4 V IS=5A, VGS=0V trr Reverse Recovery Time — 490 — ns TJ = 25°C, IF =5A, di/dt = 10 0A/μs Qrr Reverse Recovery Charge — 2333 — nC |
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