SSF1116A datasheet(1/5 Pages) SILIKRON

부품명	SSF1116A

상세설명	Advanced trench process technology

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©Silikron Semiconductor Corporation

2010.12.1

Version: 1.

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SSF1116A

Absolute Maximum Ratings

Parameter

Max.

Units

ID@Tc=25 ْC

Continuous drain current,VGS@10V

75

A

ID@Tc=100ْC

Continuous drain current,VGS@10V

61

IDM

Pulsed drain current ①

300

PD@TC=25ْC

Power dissipation

2

72

W

Linear derating factor

1.5

W/ ْC

VGS

Gate-to-Source voltage

±20

V

EAS

Single pulse avalanche energy ②

300

mJ

EAR

Repetitive avalanche energy

TBD

mJ

dv/dt

Peak diode recovery voltage

31

v/ns

TJ

TSTG

Operating Junction and

Storage Temperature Range

–55 to +1

75

ْC

Thermal Resistance

Parameter

Min.

Typ.

Max.

Units

RθJC

Junction-to-case

—

0.55

—

ْC/W

RθJA

Junction-to-ambient

—

62

Electrical Characteristics @TJ=25 ْC (unless otherwise specified)

Parameter

Min.

Typ.

Max. Units

Test Conditions

BVDSS Drain-to-Source breakdown voltage

110

120

—

V

VGS=0V,ID=250μA

RDS(on) Static Drain-to-Source on-resistance

—

12

16

mΩ

VGS=10V,ID=30A

VGS(th)

Gate threshold voltage

2.0

—

4.0

V

VDS=VGS,ID=250μA

IDSS

Drain-to-Source leakage current

—

2

μA

VDS=110V,VGS=0V

—

10

VDS=110V,

VGS=0V,TJ=150ْC

IGSS

Gate-to-Source forward leakage

—

100

nA

VGS=20V

Gate-to-Source reverse leakage

—

-100

VGS=-20V

SSF1116A TOP View (D2PAK)

ID =75A

BV=110V

Rdson=12mΩ (Typ.)

Feathers:

Advanced trench process technology

avalanche energy, 100% test

Fully characterized avalanche voltage and current

Description:

The SSF1116A is a new generation of high voltage and low

current N–Channel enhancement mode trench power

MOSFET. This new technology increases the device reliability

and electrical parameter repeatability. SSF1116A is

assembled in high reliability and qualified assembly house.

Application:

Power switching application

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