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SSF1116A 데이터시트(PDF) 1 Page - Silikron Semiconductor Co.,LTD. |
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SSF1116A 데이터시트(HTML) 1 Page - Silikron Semiconductor Co.,LTD. |
1 / 5 page ©Silikron Semiconductor Corporation 2010.12.1 Version: 1. 1 page 1of5 SSF1116A Absolute Maximum Ratings Parameter Max. Units ID@Tc=25 ْC Continuous drain current,VGS@10V 75 A ID@Tc=100ْC Continuous drain current,VGS@10V 61 IDM Pulsed drain current ① 300 PD@TC=25ْC Power dissipation 2 72 W Linear derating factor 1.5 W/ ْC VGS Gate-to-Source voltage ±20 V EAS Single pulse avalanche energy ② 300 mJ EAR Repetitive avalanche energy TBD mJ dv/dt Peak diode recovery voltage 31 v/ns TJ TSTG Operating Junction and Storage Temperature Range –55 to +1 75 ْC Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-case — 0.55 — ْC/W RθJA Junction-to-ambient — — 62 Electrical Characteristics @TJ=25 ْC (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source breakdown voltage 110 120 — V VGS=0V,ID=250μA RDS(on) Static Drain-to-Source on-resistance — 12 16 mΩ VGS=10V,ID=30A VGS(th) Gate threshold voltage 2.0 — 4.0 V VDS=VGS,ID=250μA IDSS Drain-to-Source leakage current — — 2 μA VDS=110V,VGS=0V — — 10 VDS=110V, VGS=0V,TJ=150ْC IGSS Gate-to-Source forward leakage — — 100 nA VGS=20V Gate-to-Source reverse leakage — — -100 VGS=-20V SSF1116A TOP View (D2PAK) ID =75A BV=110V Rdson=12mΩ (Typ.) Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF1116A is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1116A is assembled in high reliability and qualified assembly house. Application: Power switching application |
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